Federal contract award
80GRC025CA009
ABRICATION OF SMALL-FEATURE EXTREME ENVIRONMENT DURABLE 4H-SIC SILICON CARBIDE (SIC) JUNCTION FIELD EFFECT INTEGRATED CIRCUITS ON 100 MM DIAMETER SIC WAFERS
Award details
Obligations, current value and potential value describe different measures; they are never added together.
| Field | Reported value |
|---|---|
| Agency | National Aeronautics and Space Administration |
| Office | NASA GLENN RESEARCH CENTER |
| NAICS | 541715 — Research and Development in the Physical, Engineering, and Life Sciences (except Nanotechnology and Biotechnology) |
| PSC | AR11 — SPACE R&D SERVICES; SPACE FLIGHT, RESEARCH AND SUPPORTING ACTIVITIES; BASIC RESEARCH |
| Parent award / vehicle | Not reported |
| Set-aside | NO SET ASIDE USED. |
| Pricing type | FIRM FIXED PRICE |
| Obligations | $278.8K |
| Current contract value | $278.8K |
| Potential contract value / ceiling | $278.8K |
| Start date | Nov 19, 2024 |
| Current end date | Sep 1, 2026 |
| Potential end date | Sep 1, 2026 |
| Latest award activity | Apr 21, 2026 |
| Source loaded | Sep 19, 2026 |
Funding and modification history
Showing the latest 7 of 7 loaded transactions. Negative values are deobligations.
| Date | Modification | Obligation change | Description |
|---|---|---|---|
| Apr 21, 2026 | P00006 | $0 | FABRICATION OF SMALL-FEATURE EXTREME ENVIRONMENT DURABLE 4H-SIC SILICON CARBIDE (SIC) JUNCTION FIELD EFFECT INTEGRATED CIRCUITS ON 100 MM DIAMETER SIC WAFERS |
| Feb 3, 2026 | P00005 | $0 | FABRICATION OF SMALL-FEATURE EXTREME ENVIRONMENT DURABLE 4H-SIC SILICON CARBIDE (SIC) JUNCTION FIELD EFFECT INTEGRATED CIRCUITS ON 100 MM DIAMETER SIC WAFERS |
| Dec 4, 2025 | P00004 | $0 | FABRICATION OF SMALL-FEATURE EXTREME ENVIRONMENT DURABLE 4H-SIC SILICON CARBIDE (SIC) JUNCTION FIELD EFFECT INTEGRATED CIRCUITS ON 100 MM DIAMETER SIC WAFERS |
| Aug 11, 2025 | P00003 | $0 | REMOVAL OF CLAUSES/DRDS IAW [PCD 25-01, PCD 25-02] FABRICATION OF SMALL-FEATURE EXTREME ENVIRONMENT DURABLE 4H-SIC SILICON CARBIDE (SIC) JUNCTION FIELD EFFECT INTEGRATED CIRCUITS ON 100 MM DIAMETER SIC WAFERS |
| Jun 11, 2025 | P00002 | $0 | REMOVAL OF CLAUSES/DRDS IAW [PCD 25-01, PCD 25-02] FABRICATION OF SMALL-FEATURE EXTREME ENVIRONMENT DURABLE 4H-SIC SILICON CARBIDE (SIC) JUNCTION FIELD EFFECT INTEGRATED CIRCUITS ON 100 MM DIAMETER SIC WAFERS |
| Apr 7, 2025 | P00001 | $0 | REMOVAL OF CLAUSES/DRDS IAW [PCD 25-01, PCD 25-02] ABRICATION OF SMALL-FEATURE EXTREME ENVIRONMENT DURABLE 4H-SIC SILICON CARBIDE (SIC) JUNCTION FIELD EFFECT INTEGRATED CIRCUITS ON 100 MM DIAMETER SIC WAFERS |
| Nov 19, 2024 | 0 | $278.8K | ABRICATION OF SMALL-FEATURE EXTREME ENVIRONMENT DURABLE 4H-SIC SILICON CARBIDE (SIC) JUNCTION FIELD EFFECT INTEGRATED CIRCUITS ON 100 MM DIAMETER SIC WAFERS |
Research next steps
- Check the stated set-aside against the solicitation and current certifications.
- Review the award scope and buyer evidence before making a bid/no-bid decision.