Federal contract award
80GRC025P0002
REQUIREMENT TO PROCURE A LARGE QUANTITY OF CUSTOM GALLIUM NITRIDE (GAN) SCHOTTKY DIODES WITH CUTTING EDGE CAPABILITIES ONLY POSSIBLE TO BE MADE AT THE MOST ADVANCED GAN FOUNDRIES.
Award details
Obligations, current value and potential value describe different measures; they are never added together.
| Field | Reported value |
|---|---|
| Agency | National Aeronautics and Space Administration |
| Office | NASA GLENN RESEARCH CENTER |
| NAICS | 334413 — Semiconductor and Related Device Manufacturing |
| PSC | 5961 — Semiconductor Devices and Associated Hardware |
| Parent award / vehicle | Not reported |
| Set-aside | NO SET ASIDE USED. |
| Pricing type | FIRM FIXED PRICE |
| Obligations | $394.3K |
| Current contract value | $394.3K |
| Potential contract value / ceiling | $394.3K |
| Start date | Oct 1, 2025 |
| Current end date | Sep 30, 2026 |
| Potential end date | Sep 30, 2026 |
| Latest award activity | May 27, 2026 |
| Source loaded | Sep 26, 2026 |
Funding and modification history
Showing the latest 3 of 3 loaded transactions. Negative values are deobligations.
| Date | Modification | Obligation change | Description |
|---|---|---|---|
| May 27, 2026 | P00002 | $120.6K | REQUIREMENT TO PROCURE A LARGE QUANTITY OF CUSTOM GALLIUM NITRIDE (GAN) SCHOTTKY DIODES WITH CUTTING EDGE CAPABILITIES ONLY POSSIBLE TO BE MADE AT THE MOST ADVANCED GAN FOUNDRIES. |
| Mar 6, 2026 | P00001 | $0 | REQUIREMENT TO PROCURE A LARGE QUANTITY OF CUSTOM GALLIUM NITRIDE (GAN) SCHOTTKY DIODES WITH CUTTING EDGE CAPABILITIES ONLY POSSIBLE TO BE MADE AT THE MOST ADVANCED GAN FOUNDRIES. |
| Sep 26, 2025 | 0 | $273.8K | REQUIREMENT TO PROCURE A LARGE QUANTITY OF CUSTOM GALLIUM NITRIDE (GAN) SCHOTTKY DIODES WITH CUTTING EDGE CAPABILITIES ONLY POSSIBLE TO BE MADE AT THE MOST ADVANCED GAN FOUNDRIES. |
Research next steps
- Check the stated set-aside against the solicitation and current certifications.
- Review the award scope and buyer evidence before making a bid/no-bid decision.