Federal contract award

80NSSC26P1008

DRY ETCHING OF COMBINED GALLIUM NITRIDE EPITAXIAL LAYER AND SILICON CARBIDE SUBSTRATE

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Award details

Obligations, current value and potential value describe different measures; they are never added together.

FieldReported value
AgencyNational Aeronautics and Space Administration
OfficeNASA SHARED SERVICES CENTER
NAICS334413 — Semiconductor and Related Device Manufacturing
PSCAJ12 — GENERAL SCIENCE AND TECHNOLOGY R&D SERVICES; GENERAL SCIENCE AND TECHNOLOGY; APPLIED RESEARCH
Parent award / vehicleNot reported
Set-asideNO SET ASIDE USED.
Pricing typeFIRM FIXED PRICE
Obligations$85.0K
Current contract value$85.0K
Potential contract value / ceiling$85.0K
Start dateJul 15, 2026
Current end dateAug 19, 2026
Potential end dateAug 19, 2026
Latest award activityJul 14, 2026
Source loadedSep 26, 2026

Funding and modification history

Showing the latest 1 of 1 loaded transactions. Negative values are deobligations.

DateModificationObligation changeDescription
Jul 14, 20260$85.0KDRY ETCHING OF COMBINED GALLIUM NITRIDE EPITAXIAL LAYER AND SILICON CARBIDE SUBSTRATE

Buyer contacts from matching notices

Matched on exact award/solicitation identifier and awarding agency. Source dates describe the notice, not current contact verification.

ContactRolePublished contact methodsEvidenceSource date
Monica WilsonContactmonica.d.wilson@nasa.govSourceJul 6, 2026

Research next steps

  1. Check the stated set-aside against the solicitation and current certifications.
  2. Review the award scope and buyer evidence before making a bid/no-bid decision.