Federal contract award
N0001423C1032
UNDER THIS EFFORT, CONTRACTOR WILL EVALUATE MANUFACTURABLE FABRICATION TECHNIQUES FOR N-POLAR GAN HIGH ELECTRON MOBILITY TRANSISTORS.
Award details
Obligations, current value and potential value describe different measures; they are never added together.
| Field | Reported value |
|---|---|
| Agency | Department of Defense |
| Office | OFFICE OF NAVAL RESEARCH |
| NAICS | 541715 — Research and Development in the Physical, Engineering, and Life Sciences (except Nanotechnology and Biotechnology) |
| PSC | AC12 — NATIONAL DEFENSE R&D SERVICES; DEPARTMENT OF DEFENSE - MILITARY; APPLIED RESEARCH |
| Parent award / vehicle | Not reported |
| Set-aside | NO SET ASIDE USED. |
| Pricing type | COST PLUS FIXED FEE |
| Obligations | $2.4M |
| Current contract value | $2.4M |
| Potential contract value / ceiling | $2.4M |
| Start date | May 11, 2023 |
| Current end date | Jun 12, 2026 |
| Potential end date | Jun 12, 2026 |
| Latest award activity | Jun 20, 2025 |
| Source loaded | Aug 15, 2026 |
Funding and modification history
Showing the latest 3 of 3 loaded transactions. Negative values are deobligations.
| Date | Modification | Obligation change | Description |
|---|---|---|---|
| Jun 20, 2025 | P00006 | $0 | N-POLAR GAN DEEP RECESS HIGH ELECTRON MOBILITY TRANSISTORS ARE A NEW SEMICONDUCTOR DEVICE TECHNOLOGY WHICH IS VERY PROMISING FOR MM-WAVE DOD AND COMMERCIAL WIRELESSCOMMUNICATION APPLICATIONS. |
| Dec 20, 2024 | P00005 | $602.1K | UNDER THIS EFFORT, CONTRACTOR WILL EVALUATE MANUFACTURABLE FABRICATION TECHNIQUES FOR N-POLAR GAN HIGH ELECTRON MOBILITY TRANSISTORS. |
| Oct 8, 2024 | P00004 | $0 | UNDER THIS EFFORT, CONTRACTOR WILL EVALUATE MANUFACTURABLE FABRICATION TECHNIQUES FOR N-POLAR GAN HIGH ELECTRON MOBILITY TRANSISTORS. |
Research next steps
- Check the stated set-aside against the solicitation and current certifications.
- Review the award scope and buyer evidence before making a bid/no-bid decision.